ur
Special Topic on Organic Thin-Film Transistors includes maps
of related Research Fronts;
these maps are a graphical representation of core papers in
the Front. In the interview below, we talk with Professor
Vitaly Podzorov about his paper, "Field-effect transistors
on rubrene single crystals with parylene gate insulator" (Applied
Physics Letters 82[11]: 1739-41, 17 March 2003), which is
a core paper in the Front on Single-Crystal Thin-Film
Transistors. This paper has 79 citations to date in the
field of Physics in
Essential
Science IndicatorsSM.
Professor Podzorov has six Highly Cited Papers in this
field. Professor Podzorov is currently Assistant Professor
in the Physics Department of Rutgers University in
Piscataway, New Jersey. |
Would
you please describe the significance of your paper and why it is highly
cited?
This paper reports on fabrication of the first free-standing
single-crystal organic transistor1,
a type of device that exhibits the best performance among other
known organic transistors. It is necessary to mention that
transistors are the basic building blocks of electronic circuits,
and, therefore, good organic transistors are necessary to build the
foundation for organic electronics—one of the modern research areas
promising low-cost, large-area, and possibly flexible electronic
components.
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“...single
crystals are believed to be the purest available
materials with the lowest density of defects,
and, therefore, they are promising to reveal the
ultimate performance limits of organic
semiconductors.”
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Although transistors based on polycrystalline and amorphous
organic semiconductors have been around for a couple of decades, the
most outstanding problem that remained is the problem of defects in
these materials, present at critical surfaces and interfaces at
rather high densities. This is an important problem, because defects
such as grain boundaries and chemical impurities slow down electrons
and holes flowing through organic semiconductor by trapping and
scattering these charges and, therefore, decrease the charge carrier
mobility. This ultimately results in a poorer performance of
electronic devices, compared to the ideal (hypothetical) device, in
which defects are completely eliminated. Worse performance means
difficulties in commercialization. For this reason, the work of
scientists in this area on improving mobility of organic transistors
is extremely important. Besides the applied interest, there is a
fundamental aspect of the problem: impurities and structural
disorder mask the intrinsic properties of electrical conduction,
and, therefore, polycrystalline or amorphous devices cannot be used
to study the intrinsic physics of charge transport in organic
semiconductors.
To improve the performance there has been a continuous effort to
minimize the density of defects in organic transistors by various
approaches. We used monolithic single crystals of organic materials,
characterized by unprecedented chemical purity and structural order.
Contrary to the transistors that use polycrystalline films, our
devices are completely free from grain boundaries. Due to these
factors, the devices reported in our 2003 Applied Physics Letters1
turned out to be the cleanest system, with characteristics not
affected by defects. It has been shown later that mobility of charge
carriers in these devices can be very high (for an organic
semiconductor)2—an order of
magnitude higher than the record mobility reported for the
state-of-the-art polycrystalline thin-film transistors. This
ultimately allowed us to use these structures to study intrinsic
physics of charge transport in organic materials and to demonstrate
for the first time a band-like charge conduction3,4
and Hall effect5—phenomena that
are important for fundamental understanding of these semiconductors.
How
did you become involved in this research, and were there any particular
successes or obstacles that stand out?
As a result of the research on organic transistors performed
globally during the last decade, it became clear that scientists are
able to push the mobility of charge carriers in these materials
higher and higher, so that this important metric has been steadily
increasing year after year. Such encouraging progress is due to the
improvements constantly introduced by the scientists into organic
materials and devices. Naturally, one would ask a question: What is
the fundamental limit of performance of organic transistors in terms
of mobility? In other words, it would be interesting to know how far
we can go with these semiconductors.
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Professor Vitaly Podzorov's
most-cited paper with 156 cites to date: |
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Sundar
VC, et al., "Elastomeric transistor stamps:
reversible probing of charge transport in organic
crystals," Science 303(5664): 1644-6, 12
March 2004.
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Professor Vitaly Podzorov's paper(s)
represented in the Research
Front map with 79 cites to date: |
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Podzorov V, Pudalov VM, Gershenson ME, "Field-effect
transistors on rubrene single crystals with paralene
gate insulator," Applied Physics Letters
82(11): 1739-41, 17 March 2003. |
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Source:
Essential Science Indicators. |
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An ultimate performance would correspond to a device in which
disorder and impurities are completely eliminated. This was the
primary motivation for our work: single crystals are believed to be
the purest available materials with the lowest density of defects,
and, therefore, they are promising to reveal the ultimate
performance limits of organic semiconductors. Such studies, however,
could have become possible only if the right techniques for
single-crystal device fabrication were invented, so that
high-quality transistor structures could be prepared at the surface
of organic crystals without introducing defects.
This part of work—fabrication of single-crystal transistors—was
one of the most challenging tasks for many research groups,
including ours, who have chosen the experimental approach based on
single crystals. The challenge was to fully realize and overcome the
fact that organic semiconductors (and especially single crystals)
are incompatible with fabrication techniques typically used in
conventional semiconductor technology, such as, for example,
sputtering or photolithography. These processes inevitably introduce
a very high density of surface defects, if applied directly to
organic crystals, which in turn dramatically lower the device
performance. New fabrication approaches had to be introduced for
preparing transistor structures at vulnerable surfaces of organic
crystals. Our 2003 report in Applied Physics Letters1
turned out to be the first work to overcome the fabrication
bottleneck of single-crystal organic transistors. More techniques
for the fabrication of devices of this type appeared later6,7.
Single-crystal transistors have demonstrated that mobility of charge
carriers in organic semiconductors can be much higher than
previously thought; they’ve become a workhorse for the studies of
intrinsic physics of organic semiconductors.
Where
do you see your research and the broader field leading in the future?
I think that the field of organic semiconductors is a very
interesting area, where much more fundamental and applied science of
a high quality can be generated. What is specifically encouraging is
that some organic electronic products have made it into the early
stages of commercialization—OLED is one bright example; other
devices (photovoltaic cells and transistors) are close to being
commercialized. Therefore, it is clear that organic electronics will
be around for quite a while, and it will definitely require more
systematic research efforts both on applied and fundamental
frontiers in order to better understand and improve the existing
products and invent new ones. Some of the especially hot areas that
I think will keep gaining momentum for years to come are
photovoltaics, photonics, and devices for biotechnology. In all
these areas, organic semiconductors and hybrid (organic-inorganic)
technologies will be very promising players.
Do
you foresee practical or commercial applications?
Practical applications of organic transistors in general are
numerous, since they are one of the basic elements of electronic
circuits and can be used in active matrix organic light-emitting
displays, smart cards and RF-id tags (see, e.g.,
8,9,10). However, the best use of
the single-crystal devices specifically is in research on
fundamental properties of organic semiconductors. Using our devices
one might be able to understand fundamental limits of transistor
performance and learn some useful device physics. Because
single-crystal transistors are free from numerous non-intrinsic
phenomena, related to the interaction of charge carriers with
defects, it is typically much easier to interpret the data obtained
with these devices and to come up with new ideas of device
architecture with novel functionalities. For instance, by looking at
light-induced effects in single-crystal transistors, we have
recently discovered a general phenomenon which is also relevant to
polycrystalline devices, where this effect has been obscured by
defects. In principle, this effect can be used for optical recording
and storage of information11; in addition, it provided a
viable explanation of the origin of ubiquitous effects of parameter
drift, frequently observed in amorphous and polycrystalline
transistors.
Furthermore, in parallel with the fundamental studies, the
applied research on single-crystal devices is advancing as well.
There is a set of recent 2006-2007 papers, in which researchers have
demonstrated high-performance, mechanically flexible transistors
using ultra-thin bendable organic single crystals12
and suggested a new technique that enables fabrication of large
arrays of those devices on flexible substrates13.
These results indicate that single-crystal transistors might
eventually become very useful for purely applied purposes.
Professor Vitaly Podzorov
Physics Department
Rutgers University
Piscataway, NJ, USA
References:
¦return¦
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V. Podzorov, V. M. Pudalov and M. E.
Gershenson, Field-effect transistors on rubrene single crystals
with parylene gate insulator, Appl. Phys. Lett. 82, 1739
(2003);
- V. Podzorov, et al., Single
crystal organic field effect transistors with the hole mobility
~ 8 cm2/Vs, Appl. Phys. Lett. 83, 3504 (2003);
- V. Podzorov et al., Intrinsic
charge transport on the surface of organic semiconductors,
Phys. Rev. Lett. 93, 086602 (2004);
- V. C. Sundar et al.,
Elastomeric transistor stamps: reversible probing of charge
transport in organic crystals, Science 303, 1644 (2004);
- V. Podzorov et al., Hall effect
in the accumulation layers on the surface of organic
semiconductors, Phys. Rev. Lett. 95, 226601 (2005);
- M. E. Gershenson, V. Podzorov, and A.
F. Morpurgo, Colloquium: electronic transport in
single-crystal organic transistors, Rev. Mod. Phys. 78,
973 (2006);
- A. F. Morpurgo, M. E. Gershenson and
V. Podzorov, Organic single-crystal field-effect transistors,
Phys. Stat. Sol. (a) 201, 1302 (2004);
- C. Reese and Z. Bao, Organic
single-crystal field-effect transistors, Materials Today
10, 20 (2007);
- A. Facchetti, Semiconductors for
organic transistors, Materials Today 10, 28 (2007);
- A. Salleo, Charge transport in
polymeric transistors, Materials Today 10, 38 (2007);
- V. Podzorov and M. E. Gershenson,
Photoinduced charge transfer across the interface between
organic molecular crystals and polymers. Phys. Rev. Lett.
95, 016602 (2005);
- A. L. Briseno et al.,
High-performance organic single-crystal transistors on flexible
substrates. Adv. Mater. 18, 2320 (2006);
- A. L. Briseno et al., Patterning organic
single-crystal transistor arrays, Nature 444, 913 (2006).
<• Return to
Research Front Map
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A Closer Look...
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Below
are images sent in by Professor Vitaly Podzorov which correspond with the featured
paper, or current research. |
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Figure 1:
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Figure 2:
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Figures
1 and 2: Transistor
devices used in the March 2003
Applied Physics
Letters paper (represented in the
Research Fronts Map),
"Field-effect transistors on rubrene single
crystals with paralene gate insulator." |
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ESI Special
Topics: July 2007
Citing URL: http://esi-topics.com/otft/interviews/rfm3_VitalyPodzorov.html
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